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Ships within 48 hours · Estimated delivery Jul 23 - Jul 28
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Description
IB0912M500 RF Power Transistor 100% Genuine NewGE IB0912M500 RF Power Transistor Technical Specifications Frequency range: 960 MHz to 1. 215 GHz Output power: 500W (pulsed) Voltage: 50V Current: 20A Gain: 13dB typical Efficiency: 60% Weight: 0. 01kg (10 grams) Package: Ceramic metal flange Key Features Military grade reliability High power density Gold metallization Hermetic sealing Applications Avionics radar systems Military communications Air traffic control Test equipment Installation Notes
GE IB0912M500 RF Power Transistor
Technical Specifications
Frequency range: 960 MHz to 1.215 GHz
Output power: 500W (pulsed)
Voltage: 50V
Current: 20A
Gain: 13dB typical
Efficiency: 60%
Weight: 0.01kg (10 grams)
Package: Ceramic/metal flange
Key Features
Military-grade reliability
High power density
Gold metallization
Hermetic sealing
Applications
Avionics radar systems
Military communications
Air traffic control
Test equipment
Installation Notes
Requires heatsinking
Proper RF grounding needed
ESD sensitive device
Package Includes
1x IB0912M500 transistor
Mounting hardware
Specification sheet
Shipping & Support
In stock ready to ship
FedEx/UPS/DHL available
RoHS compliant
Export controlled item
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy