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Description
ON SEMICONDUCTOR MJ11016G Bipolar (BJT) Single Transistor, Darlington, NPN, 120 V, 200 W, 30 A, 1000 hFEThe MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built in base emitter shunt resistor. High DC current gain Collector base voltage (Vcbo = 120V) Emitter base voltage (Vcbo = 5V) Applications Industrial Product details Power Dissipation Pd 200W DC Collector Current 30A Collector Emitter
- High DC current gain
- Collector-base voltage (Vcbo = 120V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Industrial
Product details
| Power Dissipation Pd | 200W |
| DC Collector Current | 30A |
| Collector Emitter Voltage V(br)ceo | 120V |
| Transition Frequency ft | - |
| Operating Temperature Max | 200°C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 1000hFE |
| No. of Pins | 2Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-204AA |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | MJ11016G |
| Quantity | Each |
| Technical Data Sheet EN | |
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