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Ships within 48 hours · Estimated delivery Jul 29 - Aug 3
For Your Every Summer RSVP, with Code: SUMMER15
Description
FDS6675BZProduct Description This P Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features: Max rDS(on)= 13m at VGS = 10V, ID = 11A Max rDS(on)= 21. 8m at VGS = 4. 5V, ID = 9A Extended VGS range ( 25V) for battery
Product Description
Features:
- Max rDS(on)= 13mΩ at VGS = -10V, ID = -11A
- Max rDS(on)= 21.8mΩ at VGS = -4.5V, ID = -9A
- Extended VGS range (-25V) for battery applications
- HBMESD protection level of 5.4 KV typical (note 3)
- High performance trench technology for extremely low rDS(on)
https://pdf1.alldatasheet.com/datasheet-pdf/view/135587/FAIRCHILD/FDS6675BZ.html
Shipping Notes
- Free Standard Shipping on $100+ Orders to the USA.
- Except Preorder products are shipped in 48 hours.
- Delivery to the USA:
- Standard Shipping : 3-10 business days
- If time is of the essence, please consider selecting expedited delivery for faster service.
Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
- Please click here for more details>>> Return & Exchange Policy