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Description
MULTICOMP BC109C Bipolar (BJT) Single Transistor, Low Noise, NPN, 25 V, 150 MHz, 600 mW, 200 mA, 800 hFEThe BC109C from Multicomp are through hole, NPN low power, silicon planar epitaxial transistors in TO 18 metal can package. This device is used for switching and amplification. Collector emitter voltage (Vce) of 25V Continuous collector current (Ic) of 200mA Power dissipation of 600mW Operating junction temperature range from 65C to 200C Collector emitter saturation voltage of 600mV at Ic=100mA DC current gain of 40 at Ic=10A Applications Signal
- Collector emitter voltage (Vce) of 25V
- Continuous collector current (Ic) of 200mA
- Power dissipation of 600mW
- Operating junction temperature range from -65�C to 200�C
- Collector emitter saturation voltage of 600mV at Ic=100mA
- DC current gain of 40 at Ic=10�A
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Product details
| Power Dissipation Pd | 600mW |
| DC Collector Current | 200mA |
| Collector Emitter Voltage V(br)ceo | 25V |
| Transition Frequency ft | 150MHz |
| Operating Temperature Max | 200�C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 800hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-18 |
| MSL | - |
Other details
| Brand | MULTICOMP |
| Part Number | BC109C |
| Quantity | Each |
| Technical Data Sheet EN |
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